2 TB β’ PCIe 4.0 x4 / PCIe 5.0 x2 β’ 7250 MB/s β’ 6300 MB/s
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A summary of Samsung's official product description.
Announced and released September 25, 2024, the 990 EVO Plus pairs 8th-generation V-NAND TLC with a 5nm controller, reaching up to 7,250 MB/s sequential read across a dual-mode PCIe 4.0 x4 / PCIe 5.0 x2 interface. It ships without a DRAM cache, relying on Host Memory Buffer instead, and carries 1,200 TBW of endurance with a five-year warranty on the 2TB model.
Manufacturer's official sequential and random access values.
7250 MB/s β Sequential read Β· 6300 MB/s β Sequential write Β· 1000000 IOPS β Random read Β· 1250000 IOPS β Random write
Warranty period and total write endurance.
1200 TBW β Total Write Endurance Β· 5 Years β Warranty Period
A quick usage guide built from the product's specs and the editorial summary.
Smoothness, battery, and camera balance stand out in everyday use.
Great fitStrong price-to-performance for the hardware it offers.
Great fitA high refresh-rate screen and sustained performance give it an edge in mobile gaming.
Great fitCompiled by the Kacbu editorial team from spec sheets, independent press reviews and reported user feedback.
Instead of tracking today's retail price, Kacbu keeps the product's official launch information as a reference.
The manufacturer's official announcement date.
The start of the initial sales period.
Samsung 990 EVO Plus 2TB's launch price.
Samsung is headquartered in South Korea; it designs and manufactures both the controller and the V-NAND memory itself. NAND production happens mostly at its fabs in South Korea, while module assembly can vary by batch.
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